elektronische bauelemente SSG9926N 6.9 a, 20 v, r ds(on) 30 m ? n-ch enhancement mode power mosfet 11-jul-2013 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a h b m d c j k f l e n g rohs compliant product a suffix of -c specifies halogen & lead-free features low r ds(on) trench technology. low thermal impedance. fast switching speed. applications white led boost converters automotive systems industrial dc/dc conversion circuits package information package mpq leader size sop-8 2.5k 13 inch maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v t a = 25c 6.9 a continuous drain current 1 t a = 70c i d 5.4 a pulsed drain current 2 i dm 30 a continuous source current (diode conduction) 1 i s 2.8 a t a = 25c 2.1 w total power dissipation 1 t a = 70c p d 1.3 w operating junction & storage temperature range t j , t stg -55 ~ 150 c thermal resistance ratings t Q 10 sec 62.5 c / w thermal resistance junction-ambient (max.) 1 steady state r ja 110 c / w notes 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. sop-8 millimeter millimeter ref. min. m ax. ref. min. max. a 5.80 6. 20 h 0 . 35 0 .4 9 b 4 . 80 5.0 0 j 0. 375 ref. c 3 .80 4 . 0 0 k 45 d 0 8 l 1.35 1. 75 e 0.40 0.90 m 0.10 0 . 25 f 0. 19 0. 25 n 0.25 ref. g 1.27 typ. g s s s d d d d
elektronische bauelemente SSG9926N 6.9 a, 20 v, r ds(on) 30 m ? n-ch enhancement mode power mosfet 11-jul-2013 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate threshold voltage v gs(th) 1 - - v v ds = v gs , i d =250 a gate-body leakage current i gss - - 100 na v ds = 0v, v gs = 12v - - 1 v ds =16v, v gs =0v zero gate voltage drain current i dss - - 25 a v ds =16v, v gs =0v, t j =55c on-state drain current 1 i d(on) 10 - - a v ds =5v, v gs =4.5v - - 30 v gs =4.5v, i d =4.8a drain-source on-resistance 1 r ds(on) - - 40 m v gs =2.5v, i d =3.9a forward transconductance 1 g fs - 22 - s v ds =10v, i d =4.8a diode forward voltage v sd - 0.74 - v i s =1.4a, v gs =0v dynamic 2 total gate charge q g - 7 - gate-source charge q gs - 1.2 - gate-drain charge q gd - 2.6 - nc i d =4.8a v ds =10v v gs =4.5v turn-on delay time t d(on) - 10 - rise time t r - 17 - turn-off delay time t d(off) - 38 - fall time t f - 14 - ns v ds =10v i d =4.8a v gen =4.5v r l =2.1 r gen =6 input capacitance c iss - 439 - output capacitance c oss - 78 - reverse transfer capacitance c rss - 68 - pf v ds =15v v gs =0v f=1mhz notes 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente SSG9926N 6.9 a, 20 v, r ds(on) 30 m ? n-ch enhancement mode power mosfet 11-jul-2013 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical electrical characteristics curve
elektronische bauelemente SSG9926N 6.9 a, 20 v, r ds(on) 30 m ? n-ch enhancement mode power mosfet 11-jul-2013 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. typical electrical characteristics curve
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